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Home > Success Cases > GaN Wafer/Substate > Si-doped Pure GaN Wafer

Si-doped Pure GaN Wafer

Project Description

As a leading GaN Substrate Manufacturer, we specialize in the production of high-purity, free-standing GaN wafers(D/R/P Grade), offering exceptional value and the best price on the market. Our standard 2 inch Si-doped N-type thicknesses is 400μm to meet research and production needs.

To support the industry's move towards larger formats, we now also provide advanced 6 inch and 8 inch GaN substrates. This expansion in our capabilities ensures we can serve the most demanding applications. If you are looking for a reliable partner for high-quality GaN substrates, please do not hesitate to contact us for more information and pricing.

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Homray Material Technology. All rights Reserved.
E-mail:kim@homray-material.com;tina@homray-material.com

M.P: +86-15366208370 ; +86-15366203573