As a professional GaN Wafer Manufacturer, HMT supplies 2 inch (50.8mm)/ 4 inch (100mm) GaN on Sapphire substrates, available in both Un-doped and Si-doped N-type with single-side polishing. The epitaxial structure features a ~4.5µm GaN layer on a ~430um/~650µm sapphire substrate. We are committed to providing customers with highly competitive pricing without compromising on quality. Each wafer is securely packaged in a 25-piece cassette and shipped directly to you via reliable international express services.