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Home > Success Cases > GaN Epitaxial Wafer > 4'' RF GaN on SiC/GaN on Si Epi Wafer

4'' RF GaN on SiC/GaN on Si Epi Wafer

Project Description

As a premier GaN Epi Wafer Manufacturer, HMT excels in producing high-quality GaN on SiC epi wafers and GaN on Si epi wafers for demanding Power HEMT/ RF devices applications. We supply 4 inch 6 inch and 8 inch wafers, offering a choice between D-Mode ,E-Mode and RF structures to meet diverse design requirements.

Leveraging years of specialized epitaxial growth experience, we have become a proven partner to leading semiconductor companies worldwide. Our deep expertise ensures consistent performance and reliability for your most critical projects. To discuss how our GaN on SiC/ GaN on Si solutions can power your innovation, contact HMT today for a consultation.

 

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E-mail:kim@homray-material.com;tina@homray-material.com

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