
4'' RF GaN on SiC/GaN on Si Epi Wafer
Project Description
As a premier GaN Epi Wafer Manufacturer, HMT excels in producing high-quality GaN on SiC epi wafers and GaN on Si epi wafers for demanding Power HEMT/ RF devices applications. We supply 4 inch 6 inch and 8 inch wafers, offering a choice between D-Mode ,E-Mode and RF structures to meet diverse design requirements.
Leveraging years of specialized epitaxial growth experience, we have become a proven partner to leading semiconductor companies worldwide. Our deep expertise ensures consistent performance and reliability for your most critical projects. To discuss how our GaN on SiC/ GaN on Si solutions can power your innovation, contact HMT today for a consultation.





