Home | 中文 English
  • Home
  • About Us
  • Products
  • News
  • Success Cases
  • Services
  • Contact Us
  • Success Cases
  • SiC Wafer/Substrate
  • SiC Raw-Cut Wafer
  • GaN Epitaxial Wafer
  • GaN Wafer/Substate
Home > Success Cases > GaN Wafer/Substate > Un-doped 4'' GaN Substrate

Un-doped 4'' GaN Substrate

Project Description

HMT is a pioneering 4'' GaN Substrate Wafer Manufacturer, delivering high-quality, free-standing GaN wafers at highly competitive market prices. We cater to diverse needs with our standard 4-inch (Un-doped/Si-doped N-type) substrates, 450μm thick DSP or SSP, and are advancing the industry with our new large-format 6 inch and 8 inch GaN substrate offerings. Our commitment is to be a strategic partner in your innovation, providing the foundational materials for next-generation devices. For inquiries please contact our team today.

  • Home
  • About Us
  • Products
  • News
  • Success Cases
  • Services
  • Contact Us

Homray Material Technology. All rights Reserved.
E-mail:kim@homray-material.com;tina@homray-material.com

M.P: +86-15366208370 ; +86-15366203573