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Home > Success Cases > GaN Epitaxial Wafer > p-GaN Cap GaN on SiC Epi Wafer

p-GaN Cap GaN on SiC Epi Wafer

Project Description

HMT is a leading GaN Epitaxial Wafer Manufacturer, producing high-performance pGaN/GaN on SiC epi wafers for Power HEMT applications. Our product portfolio includes 4'' 6'' and 8'' with E-Mode structures (pGaN cap layer 90-100nm). With a strong foundation in epitaxial growth technology, we are the preferred partner for semiconductor companies requiring reliable and advanced materials. Contact HMT to get the ideal solution for your application.

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E-mail:kim@homray-material.com;tina@homray-material.com

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