
p-GaN Cap GaN on SiC Epi Wafer
Project Description
HMT is a leading GaN Epitaxial Wafer Manufacturer, producing high-performance pGaN/GaN on SiC epi wafers for Power HEMT applications. Our product portfolio includes 4'' 6'' and 8'' with E-Mode structures (pGaN cap layer 90-100nm). With a strong foundation in epitaxial growth technology, we are the preferred partner for semiconductor companies requiring reliable and advanced materials. Contact HMT to get the ideal solution for your application.





