4''HPSI-SiC Wafer (4H-SI) P Grade

HMT's 4 inch High-Purity Semi-Insulating (HPSI) Silicon Carbide (4H-SiC) Wafer, P-Grade, is a premier substrate engineered for high-frequency, high-power, and high-temperature semiconductor applications. Fabricated with the superior 4H polytype, this wafer offers an exceptional combination of thermal conductivity, electrical stability, and mechanical robustness.

The P-Grade designation ensures a stringent level of quality control, providing excellent crystalline perfection, low defect density, and outstanding semi-insulating properties, characterized by very high electrical resistivity. This makes it the ideal foundation for manufacturing next-generation radio frequency (RF) devices, such as GaN-on-SiC HEMTs, as well as demanding sensors and optoelectronic components. Empower your most advanced designs with a substrate that delivers unparalleled performance and reliability.

4H-SI SiC Wafer Key Features

1. High-Purity Semi-Insulating (HPSI) Property: Exhibits extremely high electrical resistivity (> 1E7 ohm·cm), minimizing parasitic capacitance and signal loss for superior high-frequency performance.
   
   
2. Superior Thermal Management: Features excellent thermal conductivity (≥ 490 W/m·K), enabling efficient heat dissipation from high-power devices, enhancing reliability and longevity.
   
   
3. Exceptional Crystalline Quality (P-Grade): Guarantees low micropipe density (MPD<0.2cm^-2) and controlled dislocation density, ensuring high device yield and consistent performance.
   
   
4. Advanced Surface Finish: Offers epitaxy-ready polished surfaces with low surface roughness, providing an ideal foundation for high-quality thin-film epitaxial growth.
   
   
5. Robust Mechanical Material: Possesses high mechanical strength and chemical inertness, allowing for stable processing in demanding fabrication environments.