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Home > Products > SiC Substrate Wafer
  • SiC Wafer Manufacturer

    Grade: D R P
    Dimension: 2 inch-8 inch
    Type: 4H-N 
    Thickness: 350um

  • SiC Wafer Manufacturer For MOSFET

    Dimension: 4 inch 6 inch 8 inch
    Type: 4H-N ; 4H-SI
    Thickness: 350um 500um
    MPD: <0.2cm2

  • P Grade 4 inch SiC Wafer Manufacturer

    Grade:  Production Grade
    Dimension: 4 inch 6 inch
    Type: 4H-N
    Thickness: 350um 500um

  • 8 inch Semi-insulated SiC Wafer Manufacturer

    Type: 4H-HPSI
    Diameter:200mm
    Grade: D and P
    Product Name: SiC Substrate

  • 6''8'' 4H-SiC Wafer Manufacturer N Type

    Grade:  D R P
    Dimension: 2 inch to 8 inch
    Type: 4H-N ; 4H-SI
    Thickness: 350um 500um

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