6''8'' 4H-SiC Wafer Manufacturer N Type

As a specialized 4H-SiC wafer manufacturer, HMT focuses on producing 4H-SiC wafers in dimensions ranging from 2 inches to 8 inches. Our product lineup includes both 4H-Conductive SiC wafers and 4H Semi-insulating SiC substrate wafers and optical AR AI SiC Wafers. Compared to 6H-SiC, the 4H-SiC polytype offers superior electron mobility, which makes it an excellent material choice for high-frequency and high-power electronic devices.

Difference between 4H-SiC and 6H-SiC

In terms of physical properties, both 4H-SiC and 6H-SiC exhibit similar properties, with high hardness, excellent thermal conductivity, and excellent chemical resistance. However, due to differences in crystal structure, 4H-SiC has higher thermal conductivity along the C-axis, while 6H-SiC shows higher thermal conductivity at the base plane, a difference that makes each polytype suitable for specific applications that require heat dissipation in different directions.

The electrical properties of 4H SiC and 6H-SiC also differ due to their crystal structure, and 4H-sic has a higher electron mobility compared to 6H-SiC, making it ideal for high frequency and high power devices. 6H-SiC, on the other hand, exhibits a low concentration of deep-level defects, making it suitable for applications requiring high-quality substrates with low carrier recombination rates.