SiC Substrate Wafer
Dummy SiC Substrate
Research SiC Substrate
Production SiC Substrate
Ultralow MPD SiC Substrate
GaN Epitaxial Wafer
SiC As-cut Wafer
SiC Boule/Ingots
GaN Substrate Wafer
Free-Standing GaN
GaN-On-Sapphire Template
SiC Epitaxial Wafer

4"/6" 500μm & 800μm Non-Standard SiC Wafers

Dimension: 6''
Type: 4H-N Conductive
Thickness: 350um/500um/800um
Package: Cassette

Product Description

While most SiC wafer manufacturers limit production to standard 350±25μm thickness for 4"/6" 4H-N type wafers, HMT addresses specialized application needs with non-standard 500μm and 800μm SiC wafers at competitive pricing.

Our 6'' 500μm 800μm 4H-N type wafers feature precisely controlled resistivity (0.015–0.028Ω·cm) and double-side polishing for superior surface quality. Additionally, we offer customized solutions for SiC as-cut wafers and SiC Boules to support advanced R&D and production.

Contact us today for various SiC wafer specifications!