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4H-N Raw-cut SiC Wafer
Diameter: 100mm 150mm 200mm
Type: 4H-N Conductive
Thickness: About 440um
Package: Cassette -
碳化硅As-cut切割晶片
直径: 150mm
类型: N type or SI type
厚度: 600um
包装: 卡塞盒 -
SiC As-cut Substrate Wafer
Diameter: 150mm
Type: N type or SI type
Thickness: 600um
Package: Cassette -
碳化硅切割片
直径:100mm/150mm
厚度:440um/480um
等级:测试级/研究级/产品级
类型:导电N型/半绝缘SI型 -
4inch SiC As-cut Substrate
Diameter: 100mm
Type: N type or SI type
Thickness: 440um
Package: Cassette
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