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SiC Substrate Wafer (Ultralow MPD Grade)
Product Name: Silicon Carbide Substrate
Grade: Ultralow MPD Production Grade
Type: 4H-N ; 4H-SI
Micropipe Density:≤0.5 cm-2 -
碳化硅衬底晶片 超低MPD碳化硅晶片
等级:超低微管密度碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型
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