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Dummy Grade SiC Ingots
Diameter:100±0.25mm
Grade: Dummy Grade
Type: 4H-N / 4H-SI
Thickness: Min ≥15mm -
测试D级碳化硅晶锭晶棒
直径:100±0.25mm
厚度: Min ≥15mm
等级:测试D级
类型:4H-N导电型;4H-SI半绝缘型 -
Production Grade SiC Ingots
Diameter:150±0.2mm
Grade: Production Grade
Type: 4H-N / 4H-SI
Thickness: Min ≥15mm -
产品P级碳化硅晶锭晶棒
直径:150±0.2mm
厚度: Min ≥15mm
等级:产品级P级
类型:4H-N导电型;4H-SI半绝缘型 -
SiC Substrate Wafer (Dummy Grade)
Product Name: Silicon Carbide Substrate
Grade: Dummy Grade
Type: 4H-N ; 4H-SI
Micropipe Density: ≤10 cm-2 -
D grade 4 inch SiC Substrate
Product Name: SiC Substrate
Grade: Dummy Grade
Type: 4H-N ; 4H-SI
Thickness: 350um;500um -
碳化硅衬底片 4英寸测试级SiC衬底晶片
等级:测试级碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型 -
SiC Substrate Wafer (Research Grade)
Product Name: Silicon Carbide Substrate
Grade: Research Grade
Type: 4H-N ; 4H-SI
Micropipe Density: ≤5 cm-2 -
4H-N/4H-SI碳化硅衬底晶片
等级:研究级碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型 -
SiC Substrate Wafer (Production Grade)
Product Name: Silicon Carbide Substrate
Grade: Production Grade
Type: 4H-N ; 4H-SI
Micropipe Density:≤1 cm-2 -
碳化硅晶片 产品级SiC衬底晶片
等级:产品级碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型
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SiC Substrate Wafer (Ultralow MPD Grade)
Product Name: Silicon Carbide Substrate
Grade: Ultralow MPD Production Grade
Type: 4H-N ; 4H-SI
Micropipe Density:≤0.5 cm-2 -
碳化硅衬底晶片 超低MPD碳化硅晶片
等级:超低微管密度碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型 -
8 inch SiC Substrate
Type: 4H-N
Diameter:200mm
Grade: Mechanical
Product Name: SiC Substrate
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4H-N Raw-cut SiC Wafer
Diameter: 100mm 150mm 200mm
Type: 4H-N Conductive
Thickness: About 440um
Package: Cassette -
碳化硅As-cut切割晶片
直径: 150mm
类型: N type or SI type
厚度: 600um
包装: 卡塞盒