Customized SiC Wafer Manufacturer

As a professional Customized SiC Wafer Manufacturers, we provide high-quality 4H-Silicon Carbide (SiC) wafers for specific R&D and mass production requirements. Our wafers are available in 2 inch, 4 inch, and 6 inch 8 inch diameters, offering both semi-insulating and N-type conductive grades. With precise control over crystal orientation, micropipe density (MPD), surface roughness, and thickness, we enable next-generation power devices, RF components, and micro-LED applications.
 
Key Customization SiC Wafer Parameters:

1. Wafer Size & Thickness

• 2 inch (50.8 mm): Thickness 350 µm ± 25 µm/ As-cut SiC Wafer thickness 900~1500um

• 4 inch (100 mm): Thickness 350 µm ± 25 µm/ 500±25um

• 6 inch (150 mm): Thickness 350 µm ± 25 µm/ 800±25um
  

2. Other customized parameters

• TTV, BOW, Warp

• Primary flat lenght
  

3. Surface Finish

• Single-side polished (SSP) or Double-side polished (DSP)

• Surface finish: Rms < 0.2 nm, 0.5nm or <1 nm

• Backside finish: As-cut, lapped, or CMP polished available
  

4. Defect Control (Zero Defect Option)

• Micropipe Density (MPD): < 0.5 /cm² 

Target Applications:

• SiC & GaN Power Devices (SBDs, MOSFETs)

• 5G RF Filters & HEMTs

• Micro-LED Mass Transfer Substrates

• Quantum Computing Research

• Optical Components (Windows, Mirrors)

Why Choose Us?

With expertise in customized SiC Wafer manufacturing, we eliminate the “one-size-fits-all” constraint. Whether you require non-standard thickness, extreme flatness, or specific resistivity windows, our engineering team collaborates with you to deliver wafers that fit your process—not the other way around.