SiC Wafer (4H-N)Manufacturer, SiC Wafer Producer N Type, GaN Wafer Supplier

GaN Epitaxial Wafer For LED

GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire
D-Mode耗尽型硅基氮化镓外延片

衬底材质：Silicon硅
衬底厚度：675um，1000um
衬底尺寸：4英寸，6英寸，8英寸
保护层类型：GaN，SiN
AlGaN/GaN碳化硅基氮化镓外延片

GaN-On-SiC
衬底厚度: 500um
衬底尺寸: 4英寸，6英寸
衬底类型: 4H-SI半绝缘
E-Mode增强型硅基氮化镓外延片

衬底材质：Silicon硅
衬底厚度：675um，1000um
衬底尺寸：4英寸，6英寸，8英寸
pGaN厚度：90~100nm
4H-N Raw-cut SiC Wafer

Diameter: 50.8mm 100mm 150mm 200mm
Type: 4H-N Conductive
Thickness:400um 600um 900um Customize
Package: Cassette
As-Cut Wafer SiC Processing Parts Manufacturer

Grade: D R P
Dimension: 2 inch to 8 inch
Type: 4H-N
Thickness: 500um 800um 900um etc
6 inch Unpolished SiC Wafer T-900um

Diameter: 150mm
Type: 4H-N Conductive
Thickness: About 900um
Package: Cassette
Premium As-Cut SiC Wafers – 4'' / 6'' / 8''

Dimension: 2'' 4'' 6'' 8''
Type: 4H-N Conductive
Thickness: Customized
Package: Cassette
2 inch As Cut SiC Wafer T-1100um

Diameter: 50.8mm
Type: 4H-N Conductive
Thickness: About 1100um Customized
Package: Cassette
2 Inch Raw Cut SiC Wafer T-1200um

Diameter: 50.8mm
Type: 4H-N Conductive
Thickness: About 1200um
Package: Cassette
2 inch Raw-Cut SiC Wafer T-900um

Diameter: 50.8mm
Type: 4H-N Conductive
Thickness: About 900um
Package: Cassette
碳化硅As-cut切割晶片

直径: 150mm
类型: N type or SI type
厚度: 600um 900um 定制厚度
包装: 卡塞盒
SiC As-cut Substrate Wafer

Diameter: 100mm 150mm 200mm
Type: SI type
Thickness: About 600um
Package: Cassette
碳化硅切割片

直径：100mm/150mm
厚度：440um/480um
等级：测试级/研究级/产品级
类型：导电N型/半绝缘SI型
4inch SiC As-cut Substrate

Diameter: 100mm
Type: N type or SI type
Thickness: 440um
Package: Cassette
Dummy Grade SiC Ingots

Diameter：100±0.25mm
Grade: Dummy Grade
Type: 4H-N / 4H-SI
Thickness: Min ≥15mm

Home <<1 2 3 4 >>Last