SiC Wafer (4H-N)Manufacturer, SiC Wafer Producer N Type, GaN Wafer Supplier

测试D级碳化硅晶锭晶棒

直径:100±0.25mm
厚度: Min ≥15mm
等级：测试D级
类型：4H-N导电型；4H-SI半绝缘型
Production Grade SiC Boule/Ingot

Diameter：150±0.2mm
Grade: Production Grade
Type: 4H-N / 4H-SI
Thickness: Min ≥15mm
产品P级碳化硅晶锭晶棒

直径:150±0.2mm
厚度: Min ≥15mm
等级：产品级P级
类型：4H-N导电型；4H-SI半绝缘型
2 Inch GaN-On-Sapphire Template

Dimensions: Ф 50.8 mm ± 1 mm
Thickness:4.5µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90%
氮化镓晶片蓝宝石氮化镓衬底晶片

尺寸：2英寸
厚度：4.5um 20um
掺杂：非掺杂，硅掺杂，镁掺杂
衬底结构：GaN-On-Sapphire
4 Inch GaN-On-Sapphire Template

Dimensions: Ф 100 mm ± 0.1 mm
Thickness:4.5 µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90%
氮化镓衬底晶片 4英寸GaN氮化镓衬底片

尺寸：4英寸
厚度：4.5um 20um
掺杂：非掺杂，硅掺杂
衬底结构：GaN-On-Sapphire
2 Inch Free-Standing GaN Substrate

Dimensions: Ф 50.8 ± 0.2 mm
Thickness: 400 ± 30 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 15 µm
氮化镓自支撑晶片 2英寸GaN衬底晶片

尺寸：2英寸
厚度：400um
掺杂：非掺杂，硅掺杂，铁掺杂
等级：测试级，研究级，产品级
4 Inch Free-Standing GaN Substrate

Dimensions: Ф 100 mm ± 0.3 mm
Thickness: 450 ± 30 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 30 µm
氮化镓自支撑衬底片 4英寸GaN氮化镓晶片

尺寸：4英寸
厚度：450um
掺杂：非掺杂，硅掺杂
电阻率：≤0.2Ω.cm
Square Free-Standing GaN Substrate

Dimension:10*15mm²
Thickness: 350±25um
Useable Surface Area:＞90%
Conduction Type: N Type,SI Type
10*10.5mm2方形氮化镓衬底晶片

尺寸：10*10.5mm²
厚度：350um
掺杂：非掺杂，硅掺杂，铁掺杂
电阻率：＜0.05Ω.cm
6''8'' P Type SiC Epi Wafer Manufacturer

Size: 6'' 8''
Type: P-Type
Dopant: Aluminum
Thickness:0.2~50μm
Silicon Carbide Epitaxial Wafer

Size: 4'' 6'' 8''
Type: N-Type/ P-Type
Dopant: Nitrogen/Aluminum
Thickness:0.2~50μm

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