SiC Wafer (4H-N)Manufacturer, SiC Wafer Producer N Type, GaN Wafer Supplier

SiC Wafer Manufacturer

Grade: D R P
Dimension: 2 inch-8 inch
Type: 4H-N
Thickness: 350um
SiC Wafer Manufacturer For MOSFET

Dimension: 4 inch 6 inch 8 inch
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
MPD: <0.2cm^₂
P Grade 4 inch SiC Wafer Manufacturer

Grade: Production Grade
Dimension: 4 inch 6 inch
Type: 4H-N
Thickness: 350um 500um
8 inch Semi-insulated SiC Wafer Manufacturer

Type: 4H-HPSI
Diameter：200mm
Grade: D and P
Product Name: SiC Substrate
6''8'' 4H-SiC Wafer Manufacturer N Type

Grade: D R P
Dimension: 2 inch to 8 inch
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
GaN On Si Epi Wafer Supplier RF Device

GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter:6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 1.5~2.0um
GaN Epitaxial On Si For Power HEMT D-Mode

GaN-On-Si Epi Wafer For Power HEMT
Substrate Diameter: 8 inch
Substrate Thickness: 1000um
Epi Layer Total Thickness：2~5.5um
GaN On Si HEMT Epi Wafer Manufacturer

GaN-On-Si Epi Wafer For Power HEMT
Substrate Diameter:4inch,6inch,8inch
Substrate Thickness:675,1000um
Epi Layer Total Thickness: 2~5.5um
4 inch 4” GaN On SiC Epi Wafer Producers

Type：For Power HEMT or RF
Substrate Diameter: 4 inch, 6 inch
Substrate Thickness: 500um
Substrate Type: Semi-insulating
pGaN On Si Epi Wafer

GaN/AlGaN/p-GaN E-mode
Dimension: 4 inch 6 inch 8 inch
Substrate Thichkness: 675um 1000um
Epi layer total thickness: 2~5.5um
AlGaN/GaN On Si Epi Wafer (AlN Buffer) Manufacturer

GaN on Si Epi Wafer
Dimension: 4 inch 6 inch 8 inch
Substrate Thichkness: 675um 1000um
Cap Layer：SiN or GaN cap
4” GaN On Si (Silicon) HEMT Epi Wafer Producers

GaN-On-Si Epi Wafer
Substrate Diameter: 4inch,6inch,8inch
Substrate Thickness: 675um，1000um
Cap Layer: SiN/GaN/p-GaN
GaN Epitaxial On SiC For Power HEMT

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4''6''
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
GaN On SiC RF HEMT Epi Wafer Manufacturer

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Diameter: 4 inch, 6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
HEMT GaN On SiC For Power Wafer Manufacturers

Type：For Power HEMT
Substrate Diameter: 4 inch, 6 inch
Substrate Thickness: 500um
Substrate Type: Semi-insulating
GaN Epitaxial On Sapphire For HEMT

GaN-On-Sapphire Epi Wafer For HEMT
Substrate Size: 2inch 3inch 4inch 6inch
Substrate Thickness:430um 520um 650um
GaN Buffer Layer:2-4.5um

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