SiC Substrate Wafer
Dummy SiC Substrate
Research SiC Substrate
Production SiC Substrate
Ultralow MPD SiC Substrate
GaN Epitaxial Wafer
SiC As-cut Wafer
SiC Boule/Ingots
GaN Substrate Wafer
Free-Standing GaN
GaN-On-Sapphire Template
SiC Epitaxial Wafer

GaN Epitaxial On SiC For Power HEMT

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4''6''
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um

Product Description

As the industry leading manufacturer of GaN Epi Wafers, 100mm and 150mm GaN Epi wafers on SiC substrates both available in HMT company. Our GaN-on-SiC Epi wafers are grown by the MOCVD process. We have complete and independent supporting system, including epi growth,clean,test and maintain equipments.

HMT company has highly automated quality control and manufacturing management systems installed and running across the Fab. HMT follow strict manufacturing procedures and production quality control to meet and exceed customer’s expectations and product specifications.
Standard Layer Structure For Power HEMT

Standard Layer Specification