4 inch 4” GaN On SiC Epi Wafer Producers

Homray Material specializes in producing high-quality 4-inch GaN-on-SiC epitaxial wafers, designed for advanced RF and power electronics applications. We have both Power and RF AlGaN/GaN on SiC structures.For example, Rs<350Ω/sq, Carrier Density>9E12cm^-2 and Carrier moblity>1600cm²/Vs. These wafers leverage the exceptional material properties of silicon carbide (SiC) and gallium nitride (GaN) to deliver superior performance in high-frequency, high-power environments such as 5G base stations, radar systems, and satellite communications

Key Advantages of GaN-on-SiC

1. Unmatched Thermal Management

   • SiC substrates exhibit 3x higher thermal conductivity (≥370 W/m·K) compared to silicon (Si), enabling efficient heat dissipation and stable operation at high power densities.

   • Reduced thermal stress and improved reliability for high-temperature applications (e.g., aerospace, defense).

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3. Crystal Quality & Scalability

   • Minimal lattice mismatch (~3.5%) between GaN and SiC ensures high-quality epitaxial growth, reducing defects and enhancing device longevity

   • Compatible with 6-inch wafer production lines, offering cost-effective scalability for mass production.
     
     
     

4. Applications

   • RF HEMTs: Ideal for 5G PA, radar, and satellite systems due to high power density and linearity.

   • Power Electronics: Supports D-mode/E-mode devices for electric vehicles (EVs) and renewable energy systems
     
     
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