AlGaN/GaN On Si Epi Wafer (AlN Buffer) manufacturer

Purchase next-generation semiconductorwith our AlGaN/GaN on Si epitaxial wafers, engineered with a proprietary AlN buffer layer for unmatched reliability and efficiency. We produce 4inch 6inch and 8inch GaN on Si epi wafers for high-frequency, high-power, and high-temperature applications by MOCVD, these wafers combine cutting-edge materials science with precision manufacturing.

Structure & Design:

• Substrate: We use p-type <111> orientation Si Substrate.

• Buffer Layer: Ultra-thin AlN (Aluminum Nitride) to minimize lattice mismatch and thermal stress.

• Epitaxial Layers: Optimized AlGaN/GaN heterostructure for enhanced 2DEG  mobility.

• Cap Layers: SiN cap layer,GaN cap layer or p-GaN cap layer.
  

Applications:

• RF Amplifiers & 5G Base Stations

• High-Efficiency Power Converters (EVs, Solar Inverters)

• UV Optoelectronics & Sensors

• Military & Aerospace Systems
  
  

Why Choose Us?

• MOCVD Expertise: State-of-the-art growth technology for precise layer control.

• Fast Delivery: Short lead times for R&D and volume orders.
  
  

Elevate your semiconductor devices with our industry-leading AlGaN/GaN on Si wafers. Request a datasheet or sample today!