6''8'' P Type SiC Epi Wafer Manufacturer

What is SiC Epi Wafer? Let professional SiC Wafer Manufacturer HMT tell you. A silicon carbide(SiC) epitaxial(Epi) wafer refers to the epitaxial growth of a single-crystal SiC thin film on the substrate surface, forming the active layer of the device. We can grow 6''8'' Aluminum P  Type SiC Epi Layer and 4inch 6inch 8inch Nitrogen N Type Epi Layer. 

The growth of a SiC Epi layer on a conductive N Type SiC substrate (thickness 350um) produces a SiC homoepitaxial wafer, which can be further processed into power devices such as Schottky barrier diodes, MOSFETs, and IGBTs. Among these, 4H-SiC is the most widely used. The thickness of the epi layer ranges from a few micrometers to over a hundred micrometers, and its doping concentration and crystal quality directly impact the final chip performance.

SiC Epi Wafer Basic Spec

• Dimension： 6inch，8inch
  
• Substrate： Production Grade SiC Wafer
• Substrate Thickness： 350±25um/ 500±25um
• Epi Layer  Dopant： Aluminum 
• Epi Layer Thickness：0.2~100um
• Bufffer : N type 1μm 1E18cm^-3