leading SiC Wafer suppliers like HMT Company provide a comprehensive range of 4H-N and 4H-SI type silicon carbide wafers, available in diameters from 2 inches to 8 inches. Whether for R&D or mass production, HMT’s SiC wafers deliver the exceptional crystal quality and electrical properties needed to power the next generation of high-performance devices.

HMT as the professional SiC Wafer Supplier, we offer 2inch to 8inch SiC Boule/Ingot for Slicing testing. Silicon Carbide (SiC), as the core substrate material of third-generation semiconductors, is extremely hard – with a Mohs hardness of 9.2.

HMT is a trusted global supplier of high-performance Silicon Carbide (SiC) substrates, enabling breakthroughs in next-generation semiconductors.

Silicon Carbide (SiC) is a binary compound formed from silicon (Si) and carbon (C) atoms in a 1:1 ratio. It is the foundational material for advanced semiconductors, with leading SiC Wafer Manufacturers producing wafers in standard sizes like 4 inch and increasingly larger 8 inch diameters sicc wafer to meet growing demand. Its fundamental building block is the Si-C tetrahedron.

Unlock the full potential of SiC technology with HMT premium SiC Wafers! Whether you're developing cutting-edge EVs, renewable energy systems, or industrial automation solutions, our wafers deliver unmatched performance and reliability. [Request a Quotation] today to learn how SiC wafers can transform your next project!

SiC substrate is the cornerstone of GaN and SiC application in the third generation semiconductor materials. Due to the limitation of technology and process level, large-scale application of GaN material as substrate is still facing challenges. Its application mainly uses sapphire, silicon wafer or semi-insulating SiC wafer as substrate, and fabricate GaN devices by epitaxy growth, which is mainly used in the field of macro station communication radio frequency. The silicon carbide material is mainly in the conductive N type SiC substrate epitaxial growth SiC epitaxial layer, should be used in all kinds of power devices, in recent years, with the maturity of technology and preparation cost, the application in the field of new energy continues to penetrate.

HMT offer 4H-SiC substrate and SiC ingots, both 4 inch and 6 inch SiC wafer are available in HMT. SiC substrate can be divided into: semi-insulating type and conductive type. 4H-SI type SIC Substrate has high resistivity (resistivity ≥108 ω ·cm), semi-insulating substrate and heterodyne gallium nitride epitaxy can be used as radio frequency device material, mainly applied with the above scene 5G communication, national defense and other fields;

SiC wafer after epitaxial growth is mainly used to manufacture power devices, radio frequency devices and other discrete devices, can be widely used in new energy vehicles, 5G communications, photovoltaic power generation, rail transit and other modern industrial fields.

While the fuel efficiency of traditional cars is determined by the engine, the range of future electric cars will be determined by the third-generation semiconductor SiC technology. Yole Developpement reports that SiC（Silicon Carbide） has become a market darling since Tesla (TSLA) led the world in using it for Model 3 inverter modules to create superior range.As the leading SiC Substrate wafer manufacturer, Homray Material Technology offer 4 inch SiC Substrate and 6 inch SiC Wafer.